Memória Note Kvr16ls11/4 Ddr3 4gb Pc3l-12800 Cl11 Kingston Ver maior

Memória Note Kvr16ls11/4 Ddr3 4gb Pc3l-12800 Cl11 Kingston


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Memória Note Kvr16ls11/4 Ddr3 4gb Pc3l-12800 Cl11 Kingston

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Memória Note Kvr16ls11/4 Ddr3 4gb Pc3l-12800 Cl11 Kingston

Linha ValueRam
Capacidade 4 GB
Módulos de memória 1 GB x 4 GB
Tipo de memória SDRAM
Tecnologia de memória DDR3 SDRAM
Formato de memória SODIMM
Velocidade da memória 1600 MHz
Computador Notebook
4GB 1Rx8 512M x 64-Bit PC3L-12800
CL11 204-Pin SODIMM
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
JEDEC standard 1.35V (1.28V ~ 1.45V) and
1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting 
address ?000? only), 4 with tCCD = 4 which does not allow seamless 
read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin 
(RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 
85°C < TCASE 
Asynchronous Reset
PCB: Height1.18? (30mm), double sided component
Lead Free RoHS Compliant
Document No. 
Page 1
Memory Module Speci
Continued >>

Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
35ns (min.)
Maximum Operating Power
(1.35V) = 2.376 W*

Operating Temperature

Storage Temperature

*Power will vary depending on the SDRAM.